{"id":67041,"date":"2023-02-16T06:04:49","date_gmt":"2023-02-16T05:04:49","guid":{"rendered":"https:\/\/botland.com.pl\/blog\/eeprom-co-to-jest-i-do-czego-sluzy\/"},"modified":"2023-08-03T11:38:15","modified_gmt":"2023-08-03T09:38:15","slug":"eeprom-co-to-je-a-k-cemu-se-pouziva","status":"publish","type":"post","link":"https:\/\/botland.cz\/blog\/eeprom-co-to-je-a-k-cemu-se-pouziva\/","title":{"rendered":"Eeprom – Co to je a k \u010demu se pou\u017e\u00edv\u00e1?"},"content":{"rendered":"\u010cas \u010dten\u00ed:<\/span> 4<\/span> min.<\/span><\/span>\t\t
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Pam\u011b\u0165 EEPROM je jedn\u00edm z nejobl\u00edben\u011bj\u0161\u00edch polovodi\u010dov\u00fdch pam\u011b\u0165ov\u00fdch \u010dip\u016f, se kter\u00fdmi se setk\u00e1v\u00e1me v po\u010d\u00edta\u010d\u00edch a mikroprocesorov\u00e9 technice.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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EEPROM - z\u00e1kladn\u00ed definice<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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EEPROM<\/a>  je zkratka pro Electrically Erasable Programmable Read Only Memory a to znamen\u00e1 elektricky vymazatelnou programovatelnou pam\u011b\u0165 ur\u010denou pouze ke \u010dten\u00ed. EEPROM je typem nevolatiln\u00ed pam\u011bti ROM – to znamen\u00e1, \u017ee po vypnut\u00ed nap\u00e1jen\u00ed se data v t\u00e9to pam\u011bti neztrat\u00ed, jako je tomu u statick\u00e9 pam\u011bti RAM. Pam\u011b\u0165 EEPROM umo\u017e\u0148uje vymaz\u00e1n\u00ed a p\u0159eprogramov\u00e1n\u00ed jednotliv\u00fdch datov\u00fdch bajt\u016f. Proto se \u010dipy EEPROM ozna\u010duj\u00ed jako \u010dipy s mo\u017enost\u00ed maz\u00e1n\u00ed bajt\u016f. Pam\u011b\u0165 EEPROM se obvykle pou\u017e\u00edv\u00e1 k ukl\u00e1d\u00e1n\u00ed mal\u00e9ho mno\u017estv\u00ed dat v po\u010d\u00edta\u010d\u00edch a jin\u00fdch elektronick\u00fdch za\u0159\u00edzen\u00edch, jako jsou vestav\u011bn\u00e9 syst\u00e9my zalo\u017een\u00e9 na mikrokontrol\u00e9rech<\/a> AVR nebo ARM.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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EEPROM – historick\u00e9 \u00fadaje<\/h2>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Pam\u011b\u0165 EEPROM byla vyv\u00edjena koncem 70. let. a na po\u010d\u00e1tku 80. let. v\u00fdzkumn\u00edky spole\u010dnost\u00ed Hughes Aircraft a Intel a byla pou\u017eit\u00e1 jako n\u00e1hrada pam\u011bt\u00ed EPROM (erasable programmable read-only memory) a PROM (programmable read-only memory). P\u0159ed aplikac\u00ed <\/span>pam\u011bti EEPROM<\/a> technologie EPROM byla \u0161iroce pou\u017e\u00edv\u00e1na. Pam\u011b\u0165ov\u00e9 \u010dipy EPROM bylo mo\u017en\u00e9 naprogramovat a n\u00e1sledn\u011b vymazat pod ultrafialov\u00fdm sv\u011btlem. \u010cipy v\u0161ak nebylo mo\u017en\u00e9 elektricky vymazat. Proces maz\u00e1n\u00ed pam\u011bti EPROM trval v\u00edce ne\u017e hodinu, co\u017e bylo v tehdej\u0161\u00edm v\u00fdvojov\u00e9m prost\u0159ed\u00ed p\u0159ijateln\u00e9, ale pro potenci\u00e1ln\u011b rychlej\u0161\u00ed prost\u0159ed\u00ed v budoucnu to bylo m\u00e1lo flexibiln\u00ed. V pr\u016fb\u011bhu \u010dasu se technologie EEPROM vyv\u00edjela tak, aby tyto v\u00fdzvy spl\u0148ovala. Na z\u00e1klad\u011b st\u00e1vaj\u00edc\u00ed struktury pam\u011bti EPROM lze pam\u011b\u0165 EEPROM vymazat a elektricky naprogramovat. V\u011bt\u0161ina \u010dip\u016f EEPROM m\u00e1 \u017eivotnost 10 000 a\u017e 100 000 cykl\u016f z\u00e1pisu, co\u017e je mnohem v\u00edce ne\u017e u \u010dip\u016f EPROM. Zaj\u00edmav\u00e9 je, \u017ee je zn\u00e1m p\u0159\u00edpad, kdy jeden u\u017eivatel experiment\u00e1ln\u011b p\u0159epsal pam\u011b\u0165 EEPROM v mikrokontrol\u00e9ru AVR, kter\u00e1 by podle v\u00fdrobce m\u011bla spr\u00e1vn\u011b fungovat a\u017e 100 000 cykl\u016f z\u00e1pisu. V tomto p\u0159\u00edpad\u011b to pam\u011b\u0165 EEPROM “vzdala” po cca. 4 miliony p\u0159eps\u00e1n\u00ed obsahu.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Polovodi\u010dov\u00e1 technologie pou\u017e\u00edvan\u00e1 v pam\u011btech EEPROM<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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V pam\u011btech EEPROM se pou\u017e\u00edvaj\u00ed tranzistory s pohybliv\u00fdmi hradly nebo tranzistory pro ukl\u00e1d\u00e1n\u00ed n\u00e1boje, zat\u00edmco tranzistor MOS (metal-oxid-silicon) slou\u017e\u00ed k odstran\u011bn\u00ed n\u00e1boje. Tranzistory s plovouc\u00edm hradlem (FGT) jsou komplement\u00e1rn\u00ed bitov\u00e9 bu\u0148ky zalo\u017een\u00e9 na technologii MOS. Pokud na plovouc\u00edm hradle nen\u00ed \u017e\u00e1dn\u00fd n\u00e1boj, impuls na \u0159\u00eddic\u00edm hradle zp\u016fsob\u00ed pr\u016ftok proudu. V tomto okam\u017eiku se tranzistor chov\u00e1 norm\u00e1ln\u011b. Kdy\u017e je hradlo nabit\u00e9, dojde k zablokov\u00e1n\u00ed nebo omezen\u00ed \u0159\u00eddic\u00edho hradla a proud p\u0159estane prot\u00e9kat. Pro vybit\u00ed kapacity hradla mus\u00ed b\u00fdt svorky source a drain zkratov\u00e1ny a do tunelu \u0159\u00eddic\u00edho hradla mus\u00ed b\u00fdt p\u0159es oxid p\u0159ivedeno odpov\u00eddaj\u00edc\u00ed nap\u011bt\u00ed na plovouc\u00ed hradlo. Nabit\u00fd\/nenabit\u00fd stav je ur\u010den elektrony zachycen\u00fdmi v hradle, kter\u00e9 pak ur\u010duj\u00ed, zda bude obsahem hradla bit 0 nebo 1. Zp\u011btn\u00e9 nap\u011bt\u00ed sm\u011brovan\u00e9 z jin\u00e9ho <\/span>tranzistoru<\/a> zp\u016fsob\u00ed rozpt\u00fdlen\u00ed n\u00e1boje v substr\u00e1tu a n\u00e1sledn\u00e9 vybit\u00ed hradla.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Obr. 1 – jedna pam\u011b\u0165ov\u00e1 bu\u0148ka EEPROM<\/em><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Typy pam\u011bt\u00ed EEPROM<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Obvykle rozli\u0161ujeme dva typy EEPROM, tj. s\u00e9riovou a paraleln\u00ed pam\u011b\u0165.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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S\u00e9riov\u00e1 pam\u011b\u0165 EEPROM<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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S\u00e9riov\u00e9 \u010dipy EEPROM mohou b\u00fdt um\u00edst\u011bny v mal\u00e9m osmip\u00f3lov\u00e9m pouzd\u0159e, tak\u017ee jsou hust\u0161\u00ed ne\u017e paraleln\u00ed \u010dipy EEPROM. S\u00e9riov\u00e9 \u010dipy jsou tak\u00e9 levn\u011bj\u0161\u00ed. Nev\u00fdhodou je, \u017ee data jsou p\u0159en\u00e1\u0161ena s\u00e9riov\u011b, a tud\u00ed\u017e pomalu. Krom\u011b toho jsou jejich operace slo\u017eit\u011bj\u0161\u00ed.<\/span><\/p>\n

Pro s\u00e9riovou pam\u011b\u0165 EEPROM je k dispozici \u0159ada standardn\u00edch typ\u016f rozhran\u00ed:<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

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\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\t\t\tPOD\u00cdVEJTE SE NA<\/span>\n\t\t\t\t\t<\/span>\n\t\t\t\t\t<\/a>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    \n
  • SPI<\/li>\n
  • I2C<\/li>\n
  • Mikrodr\u00e1t<\/li>\n
  • UNI\/O<\/li>\n
  • 1-Wire<\/li>\n<\/ul>\n

    Ka\u017ed\u00e9 z v\u00fd\u0161e uveden\u00fdch rozhran\u00ed vy\u017eaduje \u010dty\u0159i samostatn\u00e9 \u0159\u00eddic\u00ed sign\u00e1ly.<\/p>\n

    S\u00e9riov\u00fd protokol EEPROM se skl\u00e1d\u00e1 ze t\u0159\u00ed f\u00e1z\u00ed:<\/p>\n

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    • f\u00e1ze k\u00f3du operace<\/li>\n
    • f\u00e1ze adresov\u00e1n\u00ed<\/li>\n
    • datov\u00e1 f\u00e1ze<\/li>\n<\/ul>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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      Paraleln\u00ed pam\u011b\u0165 EEPROM<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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      Paraleln\u00ed \u010dip EEPROM je kompatibiln\u00ed s pam\u011b\u0165ov\u00fdmi za\u0159\u00edzen\u00edmi EPROM i flash. Jej\u00ed mechanismus p\u0159enosu dat je rychlej\u0161\u00ed a spolehliv\u011bj\u0161\u00ed ne\u017e u s\u00e9riov\u00e9 pam\u011bti EEPROM. M\u00e1 v\u0161ak v\u011bt\u0161\u00ed po\u010det pin\u016f, co\u017e zvy\u0161uje jeho velikost, hustotu a cenu. Z t\u011bchto d\u016fvod\u016f nen\u00ed paraleln\u00ed EEPROM tak roz\u0161\u00ed\u0159en\u00e1 jako s\u00e9riov\u00e1 EEPROM nebo pam\u011b\u0165 flash.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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      Zp\u016fsoby selh\u00e1n\u00ed pam\u011bti EEPROM<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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      Stejn\u011b jako u v\u0161ech po\u010d\u00edta\u010dov\u00fdch a elektronick\u00fdch za\u0159\u00edzen\u00ed nejsou \u010dipy EEPROM bezpe\u010dn\u00e9 proti selh\u00e1n\u00ed. Existuj\u00ed dva hlavn\u00ed re\u017eimy, ve kter\u00fdch mohou za\u0159\u00edzen\u00ed EEPROM selhat:<\/p>\n

      – Re\u017eim uchov\u00e1v\u00e1n\u00ed dat – B\u011bhem operace p\u0159episu se bitov\u00e9 bu\u0148ky v pam\u011bti EEPROM zaseknou v naprogramovan\u00e9m stavu. Je to proto, \u017ee FGT shroma\u017e\u010fuje zachycen\u00e9 elektrony. Jak se zachycuje st\u00e1le v\u00edce elektron\u016f, nelze detekovat pr\u00e1h “nulov\u00e9ho stavu” a bu\u0148ky z\u016fst\u00e1vaj\u00ed trvale v naprogramovan\u00e9m stavu, co\u017e m\u016f\u017ee zp\u016fsobit selh\u00e1n\u00ed \u010dipu. Z tohoto d\u016fvodu v\u00fdrobci pam\u011bt\u00ed EEPROM ud\u00e1vaj\u00ed minim\u00e1ln\u00ed a maxim\u00e1ln\u00ed po\u010det p\u0159episovac\u00edch cykl\u016f.<\/p>\n

      – Re\u017eim podr\u017een\u00ed dat – architektura EEPROM je nastavena tak, aby elektrony vst\u0159\u00edknut\u00e9 do plovouc\u00edho hradla driftovaly izol\u00e1torem, kter\u00fd nen\u00ed ide\u00e1ln\u00edm izol\u00e1torem. P\u0159i tomto pohybu doch\u00e1z\u00ed ke ztr\u00e1t\u011b n\u00e1boje, \u010d\u00edm\u017e se vyma\u017eou n\u011bkter\u00e1 data a pam\u011b\u0165ov\u00e1 bu\u0148ka se vr\u00e1t\u00ed do vymazan\u00e9ho stavu. Z tohoto d\u016fvodu v\u00fdrobci garantuj\u00ed omezenou dobu uchov\u00e1n\u00ed po ur\u010dit\u00fd po\u010det let – nap\u0159. 10 let. Faktory prost\u0159ed\u00ed, jako je teplota, mohou tak\u00e9 zkr\u00e1tit dobu ulo\u017een\u00ed dat v pam\u011bti EEPROM.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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      EEPROM - v\u00fdhody a nev\u00fdhody<\/h2><\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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      Jednou z nejv\u011bt\u0161\u00edch v\u00fdhod pam\u011bti EEPROM je, \u017ee ji lze mnohokr\u00e1t p\u0159eprogramovat. Ulo\u017een\u00e1 data jsou nevolatiln\u00ed a lze je mazat po jednotliv\u00fdch bytech. A proto\u017ee vymaz\u00e1v\u00e1n\u00ed prob\u00edh\u00e1 elektricky, je t\u00e9m\u011b\u0159 okam\u017eit\u00e9. Na rozd\u00edl od pam\u011bt\u00ed EPROM nen\u00ed nutn\u00e9 \u010dipy EEPROM pro \u00fapravu vyjmout z po\u010d\u00edta\u010de. Navzdory t\u011bmto v\u00fdhod\u00e1m m\u00e1 pam\u011b\u0165 EEPROM tak\u00e9 n\u011bkter\u00e9 nev\u00fdhody. Je dra\u017e\u0161\u00ed ne\u017e pam\u011bti PROM a EPROM a m\u00e1 omezenou dobu ulo\u017een\u00ed dat. Krom\u011b toho m\u016f\u017ee b\u00fdt nev\u00fdhodou syst\u00e9m\u016f vyu\u017e\u00edvaj\u00edc\u00edch s\u00e9riov\u00e9 \u010dipy EEPROM cena. Krom\u011b toho jsou cykly \u010dten\u00ed\/z\u00e1pisu v pam\u011bti EEPROM pomalej\u0161\u00ed ne\u017e cykly v pam\u011bti RAM. Aby se tomu dalo vyhov\u011bt, je d\u016fle\u017eit\u00e9 pou\u017e\u00edvat data ulo\u017een\u00e1 v pam\u011bti EEPROM tak, aby nedoch\u00e1zelo ke zpomalov\u00e1n\u00ed syst\u00e9mu. Pro maz\u00e1n\u00ed, \u010dten\u00ed a z\u00e1pis dat z pam\u011bti EEPROM nebo do n\u00ed je zapot\u0159eb\u00ed r\u016fzn\u00fdch nap\u011bt\u00ed. Nov\u011bj\u0161\u00ed \u010dipy EEPROM v\u0161ak obsahuj\u00ed zdroj vysok\u00e9ho nap\u011bt\u00ed p\u0159\u00edmo v \u010dipu, tak\u017ee nen\u00ed nutn\u00e9 pou\u017e\u00edvat samostatn\u00fd zdroj vysok\u00e9ho nap\u011bt\u00ed. Vzhledem k tomu, \u017ee tyto \u010dipy mohou pracovat z jedin\u00e9ho zdroje, zjednodu\u0161uje to konstrukci a sni\u017euje n\u00e1klady. Navzdory t\u011bmto nev\u00fdhod\u00e1m je pam\u011b\u0165 EEPROM \u0161iroce pou\u017e\u00edv\u00e1na, zejm\u00e9na v aplikac\u00edch, kde je po\u010det cykl\u016f \u010dten\u00ed\/z\u00e1pisu omezen.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

      Pam\u011b\u0165 EEPROM je jedn\u00edm z nejobl\u00edben\u011bj\u0161\u00edch polovodi\u010dov\u00fdch pam\u011b\u0165ov\u00fdch \u010dip\u016f, se kter\u00fdmi se setk\u00e1v\u00e1me v po\u010d\u00edta\u010d\u00edch a mikroprocesorov\u00e9 technice.<\/p>\n","protected":false},"author":22,"featured_media":63548,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[549],"tags":[],"class_list":["post-67041","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-kompendium-cs"],"acf":[],"yoast_head":"\nEeprom - Co to je a k \u010demu se pou\u017e\u00edv\u00e1? - Botland<\/title>\n<meta name=\"description\" content=\"Pam\u011b\u0165 EEPROM umo\u017e\u0148uje ukl\u00e1dat data i p\u0159i vypnut\u00e9m nap\u00e1jen\u00ed! 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