{"id":74172,"date":"2023-12-04T14:00:17","date_gmt":"2023-12-04T13:00:17","guid":{"rendered":"https:\/\/botland.com.pl\/blog\/irf740-co-to-jest-dane-techniczne-schemat-cena-i-opinie\/"},"modified":"2026-04-08T11:02:47","modified_gmt":"2026-04-08T09:02:47","slug":"irf740-co-je-to-technicke-udaje-schema-cena-a-nazory","status":"publish","type":"post","link":"https:\/\/botland.cz\/blog\/irf740-co-je-to-technicke-udaje-schema-cena-a-nazory\/","title":{"rendered":"IRF740 – Co je to? Technick\u00e9 \u00fadaje, sch\u00e9ma, cena a n\u00e1zory"},"content":{"rendered":"\u010cas \u010dten\u00ed:<\/span> 3<\/span> min.<\/span><\/span>\t\t
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IRF740 je N-kan\u00e1lov\u00fd MOSFET t\u0159et\u00ed generace s n\u00edzk\u00fdm zap\u00ednac\u00edm odporem a okam\u017eit\u00fdm sp\u00edn\u00e1n\u00edm.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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IRF740 - co to je?<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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IRF740<\/strong><\/a> je ozna\u010den\u00ed N-kan\u00e1lov\u00e9ho MOSFETu<\/strong>, elektronick\u00e9 sou\u010d\u00e1stky pou\u017e\u00edvan\u00e9 pro p\u0159esn\u00e9 \u0159\u00edzen\u00ed toku energie. Po zad\u00e1n\u00ed p\u0159\u00edslu\u0161n\u00e9ho sign\u00e1lu za\u010dne IRF740<\/strong> vys\u00edlat energii do p\u0159ipojen\u00e9ho za\u0159\u00edzen\u00ed. D\u00edky schopnosti \u0159\u00eddit tok energie se MOSFETS<\/strong><\/a> hojn\u011b pou\u017e\u00edvaj\u00ed jako sp\u00edna\u010de a vyp\u00edna\u010de<\/strong>. Jejich aplikace zahrnuj\u00ed digit\u00e1ln\u00ed elektronick\u00e9 obvody. Jednou z kl\u00ed\u010dov\u00fdch vlastnost\u00ed N-kan\u00e1lov\u00fdch MOSFET<\/strong> tranzistor\u016f je jejich velmi rychl\u00e1 odezva na zm\u011bnu stavu, d\u00edky \u010demu\u017e jsou \u010dasto instalov\u00e1ny v r\u016fzn\u00fdch typech digit\u00e1ln\u00edch za\u0159\u00edzen\u00ed.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Co je to MOSFET?<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Unipol\u00e1rn\u00ed tranzistory MOSFET<\/strong><\/a> (z anglick\u00e9ho Metal-Oxide Semiconductor Field-Effect Transistor) jsou b\u011b\u017en\u011b pou\u017e\u00edvan\u00e9 elektronick\u00e9 sou\u010d\u00e1stky<\/strong>, kter\u00e9 se mimo jin\u00e9 pou\u017e\u00edvaj\u00ed k p\u0159esn\u00e9mu \u0159\u00edzen\u00ed p\u0159ipojen\u00e9 sou\u010d\u00e1stky<\/strong>. Jejich konstrukce a vlastnosti umo\u017e\u0148uj\u00ed p\u0159esn\u00e9<\/strong> a p\u0159edev\u0161\u00edm bezpe\u010dn\u00e9 \u0159\u00edzen\u00ed p\u0159ipojen\u00fdch proudov\u00fdch spot\u0159ebi\u010d\u016f<\/strong>, kter\u00e9 se vyzna\u010duj\u00ed vysokou n\u00e1ro\u010dnost\u00ed na elektrickou energii. Tranzistor IRF740<\/strong> MOSFET vd\u011b\u010d\u00ed za sv\u00e9 vlastnosti polovodi\u010dov\u00e9mu N<\/strong>-kan\u00e1lu.<\/p>\n

Tranzistory MOSFET za\u010dnou v\u00e9st proud, kdy\u017e motor dos\u00e1hne tzv. prahov\u00e9ho nap\u011bt\u00ed<\/strong>. Pokud je tato hodnota p\u0159ekro\u010dena, je vytvo\u0159en kan\u00e1l. Je t\u0159eba poznamenat, \u017ee popsanou elektronickou sou\u010d\u00e1stkou prot\u00e9k\u00e1 proud bez ohledu na \u00farove\u0148 nap\u00e1jec\u00edho nap\u011bt\u00ed. Pokud v\u0161ak nen\u00ed p\u0159ekro\u010deno prahov\u00e9 nap\u011bt\u00ed, je hodnota proudu mal\u00e1.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

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N-MOSFET tranzistor IRF740 400V\/10A - THT.<\/figcaption>\n\t\t\t\t\t\t\t\t\t\t<\/figure>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\t\t\tPOD\u00cdVEJTE SE NA<\/span>\n\t\t\t\t\t<\/span>\n\t\t\t\t\t<\/a>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Tranzistor MOSFET - struktura<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Tranzistory MOSFET<\/strong> se skl\u00e1daj\u00ed z hradla, zdroje, izolantu, sp\u00e1du<\/strong> a m\u00edsta N-kan\u00e1lu<\/strong> (plat\u00ed pro N-kan\u00e1lov\u00e9 verze). Gate neboli hradlo<\/strong> m\u00e1 symbol G<\/strong>. Nen\u00ed to nic jin\u00e9ho ne\u017e metalizovan\u00fd povlak. Izol\u00e1tor<\/strong> je naproti tomu vyroben z oxidu k\u0159emi\u010dit\u00e9ho, tak\u017ee p\u0159edstavuje bezpe\u010dn\u00fd odd\u011blova\u010d mezi ostatn\u00edmi sou\u010d\u00e1stkami a hradlem. Substr\u00e1t neboli polovodi\u010d<\/strong> m\u00e1 symbol B<\/strong> (bulk). Posledn\u00edmi prvky jsou drain<\/strong> a source (S)<\/strong>.<\/p>\n

IRF740<\/strong> lze sestavit nap\u0159. pomoc\u00ed \u0161rouby velikosti M3<\/strong><\/a>. B\u011bhem p\u00e1jen\u00ed<\/strong><\/a> MOSFETu se doporu\u010duje pou\u017e\u00edvat p\u00e1je\u010dku<\/strong> vybavenou plynulou regulac\u00ed teploty<\/strong>. V\u00fdrobce stanovil maxim\u00e1ln\u00ed dobu p\u00e1jen\u00ed na 10 s. Naopak teplota p\u00e1jec\u00edho hrotu<\/strong><\/a> by nem\u011bla p\u0159ekro\u010dit 300 \u2103<\/strong>.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Pou\u017eit\u00ed tranzistor\u016f MOSFET<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Tranzistory MOSFET<\/strong><\/a> se b\u011b\u017en\u011b pou\u017e\u00edvaj\u00ed jako sp\u00edna\u010de,<\/strong> kter\u00e9 jsou zodpov\u011bdn\u00e9 za \u0159\u00edzen\u00ed nap\u011bt\u00ed. Dal\u0161\u00ed vyu\u017eit\u00ed je v zesilova\u010d\u00edch<\/strong>. MOSFETy se vyzna\u010duj\u00ed symbolickou spot\u0159ebou energie a n\u00edzk\u00fdm odporem kan\u00e1lu. Tato kombinace vede k relativn\u011b n\u00edzk\u00fdm ztr\u00e1t\u00e1m v\u00fdkonu.<\/p>\n

Dal\u0161\u00ed vyu\u017eit\u00ed tranzistor\u016f MOSFET je v r\u016fzn\u00fdch typech obvod\u016f<\/strong>, kter\u00e9 jsou nap\u00e1jeny n\u00edzk\u00fdm nap\u011bt\u00edm. Zaj\u00edmav\u00e9 je, \u017ee p\u0159edstaven\u00e9 elektronick\u00e9 sou\u010d\u00e1stky na\u0161ly uplatn\u011bn\u00ed tak\u00e9 v r\u016fzn\u00fdch typech pam\u011bt\u00ed<\/strong>, mikroprocesorech<\/strong> a dokonce i v hradlech CMOS<\/strong> (Complementary Metal-Oxide Semiconductor). Kde v\u0161ude se je\u0161t\u011b pou\u017e\u00edvaj\u00ed tranzistory MOSFET? Jsou ide\u00e1ln\u00ed pro konstrukci pohon\u016f s prom\u011bnnou frekvenc\u00ed<\/strong>.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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IRF740 - Technick\u00e9 specifikace<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Maxim\u00e1ln\u00ed nap\u011bt\u00ed source-drain je\u00a0400 V<\/strong>, zat\u00edmco nap\u011bt\u00ed gate-source je\u00a0+\/- 20 V<\/strong>. Trval\u00fd odtokov\u00fd proud je\u00a010 A<\/strong>\u00a0p\u0159i\u00a025 \u2103<\/strong>, zat\u00edmco okoln\u00ed teplota\u00a0100 \u2103<\/strong>\u00a0sni\u017euje proud na\u00a06,3 A<\/strong>.<\/p>

Elektronick\u00e9 komponenty\u00a0IRF740<\/strong>\u00a0lze bezpe\u010dn\u011b pou\u017e\u00edvat v \u0161irok\u00e9m rozsahu provozn\u00edch teplot\u00a0od -55 \u2103 do +150 \u2103<\/strong>. V praxi to znamen\u00e1 stabiln\u00ed a spolehliv\u00fd provoz za nejr\u016fzn\u011bj\u0161\u00edch podm\u00ednek.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Dal\u0161\u00ed informace o IRF740<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Popisovan\u00fd model byl vyroben v souladu s platnou sm\u011brnic\u00ed RoHS<\/strong> (omezen\u00ed nebezpe\u010dn\u00fdch l\u00e1tek). Tato norma byla p\u0159ijata a zavedena \u010dlensk\u00fdmi st\u00e1ty Evropsk\u00e9 unie s c\u00edlem co nejv\u00edce sn\u00ed\u017eit mno\u017estv\u00ed nebezpe\u010dn\u00fdch l\u00e1tek, kter\u00e9 mohou potenci\u00e1ln\u011b pronikat do \u017eivotn\u00edho prost\u0159ed\u00ed mimo jin\u00e9 z elektronick\u00fdch sou\u010d\u00e1stek.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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IRF740 - n\u00e1zory<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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N-kan\u00e1lov\u00fd MOSFET<\/strong> IRF740<\/strong><\/a> se t\u011b\u0161\u00ed velk\u00e9 oblib\u011b a dobr\u00e9 pov\u011bsti mezi za\u010d\u00ednaj\u00edc\u00edmi i zku\u0161en\u00fdmi elektroniky a kutily, a to i d\u00edky sv\u00e9mu n\u00edzk\u00e9mu tepeln\u00e9mu odporu, univerz\u00e1ln\u00edmu pou\u017eit\u00ed<\/strong> a obl\u00edben\u00e9mu krytu TO-220AB<\/strong>. Pozitivn\u00ed zp\u011btn\u00e1 vazba je tak\u00e9 zp\u016fsobena relativn\u011b n\u00edzkou cenou<\/strong> nejen pro n\u00e1kup na velkoobchodn\u00ed \u00farovni, ale i pro jednor\u00e1zov\u00fd n\u00e1kup. To znamen\u00e1 plnou dostupnost t\u00e9to elektronick\u00e9 sou\u010d\u00e1sti.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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IRF740 - cena<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Cena MOSFETu IRF740<\/strong> z\u00e1vis\u00ed nejen na konkr\u00e9tn\u00edm dodavateli, ale tak\u00e9 na po\u010dtu zakoupen\u00fdch komponent. N\u00e1klady na po\u0159\u00edzen\u00ed jednoho MOSFETu obvykle nep\u0159es\u00e1hnou n\u011bkolik set korun<\/strong> (plus po\u0161tovn\u00e9). P\u0159i objedn\u00e1vce n\u011bkolika set nebo n\u011bkolika tis\u00edc MOSFET\u016f IRF740 v\u0161ak m\u016f\u017eete o\u010dek\u00e1vat v\u00fdrazn\u011b ni\u017e\u0161\u00ed ceny. Vybran\u00ed prodejci uplat\u0148uj\u00ed automatick\u00e9 slevy, kter\u00e9 se aktivuj\u00ed p\u0159i hromadn\u00fdch objedn\u00e1vk\u00e1ch.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

IRF740 je N-kan\u00e1lov\u00fd MOSFET t\u0159et\u00ed generace s n\u00edzk\u00fdm zap\u00ednac\u00edm odporem a okam\u017eit\u00fdm sp\u00edn\u00e1n\u00edm.<\/p>\n","protected":false},"author":22,"featured_media":73693,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[7,179],"tags":[],"class_list":["post-74172","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-elektronika","category-kompendium"],"acf":[],"yoast_head":"\nIRF740 - Co je to? Technick\u00e9 \u00fadaje, sch\u00e9ma, cena a n\u00e1zory - Botland<\/title>\n<meta name=\"description\" content=\"N-kan\u00e1lov\u00fd MOSFET IRF740 - z\u00e1kladn\u00ed informace. 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